smd type ic smd type ic tssop-8 unit: mm KTD2005 features low on resistance. 2.5v drive. mounting height 1.1mm. composite type, facilitating high-density mounting. absolute maximum ratings ta = 25 parameter symbol rating unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 10 v drain current(dc) i d 1a drain current(pulse) *1 i dp 4a allowable power dissipation *2 p d 0.8 w total dissipation *2 pt 1.0 w channel temperature t ch 150 storage temperature t stg -55 to +150 *1 pw 10 s, duty cycle 1% *2 mounted on a ceramic board (1000mm 2 x0.8mm) 1:drain1 2 : source1 3 : source1 4:gate1 5:gate2 6 : source2 7 : source2 8:drain2 smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to source breakdown voltage v (br)dss i d =1ma, v gs =0 20 v zero gate voltage drain current i dss v ds =20v,v gs =0v 10 a gate-to-source leakage current i gss v gs = 8v,v ds =0v 10 a cutoff voltage v gs(off) v ds =10v,i d =1ma 0.4 1.3 v forward transfer admittance y fs v ds =10v,i d =1a 1.8 2.6 s r ds(on)1 v gs =10v,i d = 1a 200 260 r ds(on)2 v gs =4v,i d = 1a 260 360 input capacitance c iss 90 pf output capacitance c oss 60 pf reverse transfer capacitance c rss 28 pf turn-on delay time t d(on) 10 ns rise time t r see specified test circuit 22 ns turn-off delay time t d(off) 20 ns fall time t f 19 ns total gate charge qg 6 nc gate-to-source charge qgs 1 nc gate-to-drain "miller" charge qgd 2 nc diode forward voltage v sd i s =1a,v gs =0v 1.0 1.2 v v ds =10 v,f = 1 mhz m drain to source on-state resistance v ds =10v,v gs =10v,i d =1a switching time test circuit smd type ic smd type ic KTD2005 smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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